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  sep. 2001 mitsubishi nch power mosfet FY3ACJ-03F high-speed switching use FY3ACJ-03F outline drawing dimensions in mm sop-8 application motor control, lamp control, solenoid control dc-dc converter, etc. 30 20 3 21 3 1.4 5.6 1.5 ?5~+150 ?5~+150 0.07 v gs = 0v v ds = 0v l = 10 h typical value drain-source voltage gate-source voltage drain current drain current (pulsed) avalanche drain current (pulsed) source current source current (pulsed) maximum power dissipation channel temperature storage temperature weight v v a a a a a w c c g v dss v gss i d i dm i da i s i sm p d t ch t stg symbol maximum ratings (tc = 25 c) parameter conditions ratings unit 4v drive v dss ................................................................. 30v r ds (on) (max) ................................................ 70m ? i d ........................................................................ 3a dual type mitsubishi nch power mosfet FY3ACJ-03F high-speed switching use 5.0 0.4 1.27 1.8 max. 6.0 4.4 ?? ?? ???? source gate drain ? ? ? ? ?? ? ? ?? ? ?
sep. 2001 mitsubishi nch power mosfet FY3ACJ-03F high-speed switching use v (br)dss v (br)gss i gss i dss v gs (th) r ds (on) r ds (on) v ds (on) c iss c oss c rss t d (on) t r t d (off) t f v sd r th (ch-a) v v a ma v m ? m ? mv pf pf pf ns ns ns ns v c/w 30 20 1.0 1.5 50 80 150 260 4.0 6.5 21.0 8.5 0.75 10 0.1 2.0 70 120 210 1.10 83.3 electrical characteristics (tch = 25 c) drain-source breakdown voltage gate-source breakdown voltage gate-source leakage current drain-source leakage current gate-source threshold voltage drain-source on-state resistance drain-source on-state resistance drain-source on-state voltage input capacitance output capacitance reverse transfer capacitance turn-on delay time rise time turn-off delay time fall time source-drain voltage thermal resistance symbol unit parameter test conditions limits min. typ. max. i d = 1ma, v gs = 0v i g = 100 a, v ds = 0v v gs = 20v, v ds = 0v v ds = 30v, v gs = 0v i d = 1ma, v ds = 10v i d = 3a, v gs = 10v i d = 1.5a, v gs = 4v i d = 3a, v gs = 10v v ds = 10v, v gs = 0v, f = 1mhz v dd = 15v, i d = 1.5a, v gs = 10v, r gen = r gs = 50 ? i s = 1.4a, v gs = 0v channel to ambient


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